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Semiconductor materials are the basic materials for microelectronic devices and photovoltaic devices, and their impurity and defect properties seriously affect device performance. With the increase of the integration of microelectronic devices and the conversion efficiency of photovoltaic devices, the demand for semiconductor raw materials is getting higher and higher. In order to meet the demands of industrial production, the material detection method is required to have a higher sensitivity and a faster measurement speed while avoiding damage to the material. Carriers are functional carriers of semiconductor materials. Their transport properties determine the performance of various optoelectronic devices, including carrier lifetime, diffusion coefficient, and surface recombination rate. Photocarrier radiation technology is an all-optical non-destructive testing method that realizes the simultaneous measurement of carrier transport parameters. However, this method still has some limitations in the measurement and characterization of carrier transport parameters, such as theoretical models. Applicability, measurement accuracy of parameters, measurement speed, etc.
Under the support of the National Natural Science Foundation of China, the Institute of Optics and Electronics of the Chinese Academy of Sciences addressed the above-mentioned issues, using traditional semiconductor silicon as the research object, establishing a nonlinear optical carrier radiation model, and based on this, proposed a multi-spot optical load. Electron radiation technology and steady-state photocarrier radiation imaging technology have confirmed the effectiveness of the above techniques through simulation calculations and experimental measurements. The multi-spot photocarrier radiation technology can completely eliminate the influence of the frequency response of the measurement system instrument on the measurement results and improve the measurement accuracy of the carrier transport parameters. The P-type single crystal silicon with a resistivity of 0.1-0.2Ω∙cm is used as the For example, the proposed multi-spot photocarrier radiation technique reduces the measurement uncertainty of carrier lifetime, diffusion coefficient, and surface recombination rate from the conventional ±15.9%, ±29.1%, and >±50% to ±10.7%. ±8.6% and ±35.4%. In addition, the steady-state photo-carrier radiation imaging technology simplifies the theoretical model and measurement device, greatly improves the measurement rate, and has a greater industrial application potential.
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