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Recently, Lund University of Sweden developed a 13.8%-efficient InP nanowire solar cell. According to news from Peking University, Xu Hongqi, a professor of the Thousand Talents Program at the Institute of Physical Electronics of the University, and scientists from Sweden and Germany Co-participated in this research cooperation, and gained important progress in the research of using epitaxially grown III-V semiconductor nanowire technology to produce high-performance photovoltaic devices.
The research results are based on InP nanowire array as the core photovoltaic device material. After optimizing the doping process and structural design, the scientists and engineers worked together to jointly achieve the results; the performance of the prototype device is much higher than that of the corresponding InP film. Photovoltaic devices made by the technology have the advantages of less material consumption, easy extension to higher performance multi-junction devices, compatibility with contemporary silicon processes, and the like.
Prof. Xu Hongqi's research group has done a lot of exploration work in recent years in developing and researching the principles and technologies of new semiconductor nanowire photovoltaic devices. In particular, they recently proposed a photovoltaic device manufacturing process using epitaxially grown strained nanowire heterostructures (Nano Letters, 2010, 10: 1108-1112; Advanced Materials, 2012, 24: 4692-4706), obtaining international academic circles and Industry's attention. This process proposes the use of a strain-induced piezoelectric field to separate the electrons and holes generated by photoexcitation, replacing the doping required for making a pn junction in a conventional photovoltaic device process, and thus is expected to substantially increase the conversion efficiency of photovoltaic devices.
The above research work has been supported by national major scientific research projects and the National Natural Science Foundation.
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